B0637 Surface modification technologies IX by T. S. Sudarshan, W. Reitz, J. J. Stiglich

By T. S. Sudarshan, W. Reitz, J. J. Stiglich

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0 Acknowledgements Rutherford backscattering analyses by James Hirvonen and Wendy Kosik of the Army Research Laboratory, Aberdeen Proving Ground, MD are gratefully acknowledged. This work is supported under Contract N00178-95-C-3026 by the Naval Surface Warfare Center. The program is managed by Dr. S. Dallek, Electrochemistry Branch, Code 683, NSWC Carderock Division, Silver Spring, MD 20903-5640. 0 References 1. 2. M. SEAL: Phys. Status Solidi, 3, 1963,658. T. EVANSand C. PHAAL: Proceedings of the 5th Carbon Conference, Penn State, University Park, PA, 1, 1962 147.

Rutherford backscattering has been employed to examine the distributions of implanted silicon atoms. e 12 Wavelength 16 10 22 20 (urn) FTIR spectra of eVD diamond windows implanted at 1000 e with 30 keY Si". ~,~---1 unimplauted " c 1) 2 dJ 0.. " U. oO . J 10 12 Wavelength Figure 2: 14 16 10 20 22 (I-'m) FTIR spectra of eVD diamond windows implanted with Si' at 1000 e and at room temperature. 0 Results Investigations of Si ion energy,dose and temperature conditions for reactive formation of integral SiCx layers on diamond are in progress.

COLTON:'Molecular dynamics simulations of the nanometer-scale mechanical properties of compressed Buckminsterfullerene,' Thin Solid Films, 206, 1991,220223. 49. D. J. BACON: Introduction to Dislocations, 3rd. , Pergamon Press, Oxford, 1984. 50. B. PETHICA,P. KOIDL,J. GOBRECHT,andC. SCHULER:'Micromechanical Surface Modification Technologies IX 19 investigations of amorphous hydrogenated carbon films on silicon,' Journal of Vacuum Science and Technology A, 3(6), 1985, 2391-2393. 51. N. GLOSLI,J. R.

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